1999. 11. 30
1/2
SEMICONDUCTOR
TECHNICAL DATA
2N5550S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
High Collector Breakdwon Voltage
: V
CBO
=160V, V
CEO
=140V
Low Leakage Current.
: I
CBO
=100nA(Max.) V
CB
=100V
Low Saturation Voltage
: V
CE(sat)
=0.25V(Max.) I
C
=50mA, I
B
=5mA
Low Noise : NF=10dB (Max.)
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
160
V
Collector-Emitter Voltage
V
CEO
140
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
600
mA
Base Current
I
B
100
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
Type Name
Marking
Lot No.
ZP
1999. 11. 30
2/2
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
2N5550S
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=100V, I
E
=0
-
-
100
nA
V
CB
=100V, I
E
=0, Ta=100
-
-
100
A
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
50
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=0.1mA, I
E
=0
160
-
-
V
Collector-Emitter *
Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
140
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
6
-
-
V
DC Current Gain *
h
FE
(1)
V
CE
=5V, I
C
=1mA
60
-
-
h
FE
(2)
V
CE
=5V, I
C
=10mA
60
-
250
h
FE
(3)
V
CE
=5V, I
C
=50mA
20
-
-
Collector-Emitter *
Saturation Voltage
V
CE(sat)
1
I
C
=10mA, I
B
=1mA
-
-
0.15
V
V
CE(sat)
2
I
C
=50mA, I
B
=5mA
-
-
0.25
Base-Emitter *
Saturation Voltage
V
BE(sat)
1
I
C
=10mA, I
B
=1mA
-
-
1.0
V
V
BE(sat)
2
I
C
=50mA, I
B
=5mA
-
-
1.2
Transition Frequency
f
T
V
CE
=10V, I
C
=10mA, f=100MHz
100
-
300
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
-
6
pF
Input Capacitance
C
ib
V
BE
=0.5V, I
C
=0, f=1MHz
-
-
30
pF
Small-Signal Current Gain
h
fe
V
CE
=10V, I
C
=1mA, f=1kHz
50
-
200
Noise Figure
NF
V
CE
=5V, I
C
=250 A
Rg=1k , f=10Hz 15.7kHz
-
-
10
dB
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